Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
Identifieur interne : 00BE01 ( Main/Repository ); précédent : 00BE00; suivant : 00BE02Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
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Abstract
An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in Cl2-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. Statistical information such as correlation length and rms roughness of the sidewall profile obtained through three-dimensional imaging by AFM has been presented. rms roughness as low as 3.45 nm was measured on the sidewall of 4-μm-deep etched InP/InGaAsP heterostructures. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope</title><author><name sortKey="Jang, J H" uniqKey="Jang J">J. H. Jang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Zhao, W" uniqKey="Zhao W">W. Zhao</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Bae, J W" uniqKey="Bae J">J. W. Bae</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Selvanathan, D" uniqKey="Selvanathan D">D. Selvanathan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Rommel, S L" uniqKey="Rommel S">S. L. Rommel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Adesida, I" uniqKey="Adesida I">I. Adesida</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Lepore, A" uniqKey="Lepore A">A. Lepore</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sarnoff Corporation, Princeton, New Jersey 08543</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Sarnoff Corporation, Princeton</wicri:cityArea></affiliation></author><author><name sortKey="Kwakernaak, M" uniqKey="Kwakernaak M">M. Kwakernaak</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sarnoff Corporation, Princeton, New Jersey 08543</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Sarnoff Corporation, Princeton</wicri:cityArea></affiliation></author><author><name sortKey="Abeles, J H" uniqKey="Abeles J">J. H. Abeles</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sarnoff Corporation, Princeton, New Jersey 08543</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Sarnoff Corporation, Princeton</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0494480</idno><date when="2003-11-17">2003-11-17</date><idno type="stanalyst">PASCAL 03-0494480 AIP</idno><idno type="RBID">Pascal:03-0494480</idno><idno type="wicri:Area/Main/Corpus">00C646</idno><idno type="wicri:Area/Main/Repository">00BE01</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Optical testing</term><term>Optical waveguides</term><term>Semiconductor heterojunctions</term><term>Sputter etching</term><term>Surface topography measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4279G</term><term>0630B</term><term>8165C</term><term>6837P</term><term>5277B</term><term>8105E</term><term>4287</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Guide onde optique</term><term>Microscopie force atomique</term><term>Mesure topographie surface</term><term>Hétérojonction semiconducteur</term><term>Gravure pulvérisation</term><term>Essai optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in Cl<sub>2</sub>-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. Statistical information such as correlation length and rms roughness of the sidewall profile obtained through three-dimensional imaging by AFM has been presented. rms roughness as low as 3.45 nm was measured on the sidewall of 4-μm-deep etched InP/InGaAsP heterostructures. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope</s1></fA08><fA11 i1="01" i2="1"><s1>JANG (J. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZHAO (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>BAE (J. W.)</s1></fA11><fA11 i1="04" i2="1"><s1>SELVANATHAN (D.)</s1></fA11><fA11 i1="05" i2="1"><s1>ROMMEL (S. L.)</s1></fA11><fA11 i1="06" i2="1"><s1>ADESIDA (I.)</s1></fA11><fA11 i1="07" i2="1"><s1>LEPORE (A.)</s1></fA11><fA11 i1="08" i2="1"><s1>KWAKERNAAK (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>ABELES (J. H.)</s1></fA11><fA14 i1="01"><s1>Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Sarnoff Corporation, Princeton, New Jersey 08543</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>4116-4118</s1></fA20><fA21><s1>2003-11-17</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0494480</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in Cl<sub>2</sub>-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. 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